Gallium Phosphide
|
Material
:Dopant |
Type |
Diameter [mm] |
EPD [cm-2] |
Carrier Conc. [cm-3] |
Mobility [cm2/Vs] |
Orientation |
Resistivity [Ohmcm] |
|
GaP:S |
N |
2", 3" |
<1*105 |
2*1017-2*1018 |
>90 |
(100), (111), (110) |
|
|
GaP:-
undoped |
N |
2", 3" |
<1*105 |
<1016 |
>90 |
(100), (111), (110) |
|
We offer materials in the form of:
--- epi-ready wafers:
Diameter: 2" (50.8±0.5mm) or (50.0±0.5mm); 3" (76.2±0.5mm)
Orientation: ±0.1° or ±0.1° or ±0.1°
Thickness: 350±20µm or as specified
Flats: US or EJ (15±2.0 mm / 8±2.0 mm)
Surface finish: Single side polished or double side polished
