Wideband and narrowband defense and
commercial communication systems
–– General Purpose RF Power
–– Jammers
–– Radar
–– Professional radio systems
––WiMAX
––Wideband amplifiers
–– Test instrumentation
–– Cellular infrastructure
• Frequency: DC to 6 GHz
• Linear Gain: >10 dB at 6 GHz
• Operating Voltage: 28 V
• Output Power (P3dB): >7 W at 6 GHz
• Lead-free and RoHS compliant
• Low thermal resistance package
The TriQuint T1G6000528-Q3 is a 7 W (P3dB) discrete
GaN on SiC HEMT which operates from DC to 6 GHz
and typically provides >10 dB gain at 6 GHz. The
device is constructed with TriQuint’s proven 0.25
μm production process, which features advanced
field plate techniques to optimize power and efficiency
at high drain bias operating conditions. This
optimization can potentially lower system costs in
terms of fewer amplifier line-ups and lower thermal
management costs.
