• Frequency: DC to 6 GHz
• Output Power (P3dB): 30 W at 6 GHz
• Linear Gain: >14 dB at 6 GHz
• Operating Voltage: 28 V
• Low thermal resistance package
The TriQuint T1G6003028-FL is a 30 W (P3dB)
discrete GaN on SiC HEMT which operates
from DC to 6 GHz. The device is constructed
with TriQuint’s proven 0.25 μm process, which
features advanced field plate techniques to
optimize power and efficiency at high drain
bias operating conditions. This optimization
can potentially lower system costs in terms of
fewer amplifier line-ups and lower thermal
management costs.
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
