CGHV96050F1 是一种碳化硅 （SiC） 衬底上的氮化镓 （GaN） 高电子迁移率晶体管 （HEMT）。与其他技术相比，这种 GaN 内部匹配 （IM） FET 具有出色的功率附加效率。与硅或砷化镓相比，GaN 具有优异的性能，包括更高的击穿电压、更高的饱和电子漂移速度和更高的导热性。与 GaAs 晶体管相比，GaN HEMT 还提供更高的功率密度和更宽的带宽。该 IM FET 采用金属/陶瓷法兰封装，可实现最佳电气和热性能。​

• 7.9 - 8.4 GHz Operation
• 80 W POUT typical
• >13 dB Power Gain
• 33% Typical PAE
• 50 Ohm Internally Matched
• <0.1 dB Power Droop
Applications
• Satellite Communications
• Terrestrial BroadbandWolfspeed's CGHV96050F1 is a gallium nitride (GaN) High Electron
Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates.
This GaN Internally Matched (IM) FET offers excellent power added
efficiency in comparison to other technologies. GaN has superior
properties compared to silicon or gallium arsenide, including higher
breakdown voltage, higher saturated electron drift velocity and
higher thermal conductivity. GaN HEMTs also offer greater power
density and wider bandwidths compared to GaAs transistors. This
IM FET is available in a metal/ceramic flanged package for optimal
electrical and thermal performance.
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深圳市雄达辉科技有限公司