CGHV96100F2 100 W、8.4 - 9.6 GHz、50 欧姆、输入/输出匹配 GaN 放大器描述 CGHV96100F2 是一款氮化镓 （GaN） 放大器。与其他技术相比，这款 GaN 放大器具有出色的功率附加效率。与硅或砷化镓相比，GaN 具有优异的性能，包括更高的击穿电压、更高的饱和电子漂移速度和更高的导热性。与 GaAs 晶体管相比，GaN HEMT 还提供更高的功率密度和更宽的带宽。该放大器采用金属/陶瓷法兰封装，可实现更佳电气和热性能。CGHV96100F2
 100 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output 
Matched GaN Amplifier
 Description
 The CGHV96100F2 is a gallium nitride (GaN) amplifier. This GaN amplifier offers excellent 
power added efficiency in comparison to other technologies. GaN has superior properties 
compared to silicon or gallium arsenide, including higher breakdown voltage, higher 
saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer 
greater power density and wider bandwidths compared to GaAs transistors. This amplifier is 
 
深圳市雄达辉科技有限公司。13535390575

• 8.4 - 9.6 GHz Operation • 145 W POUT typical • 10 dB Power Gain • 40% Typical PAE • 50 Ohm Internally Matched • <0.3 dB Power Droop​