Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source
  Breakdown Voltage

BVDSS

VGS=0V
  ID=250μA

75

-

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=75V,VGS=0V

-

-

1

μA

Gate-Body

  Leakage Current

IGSS

VGS=±20V,VDS=0V

-

-

±100

nA

On Characteristics (Note
  3)

Gate Threshold
  Voltage

VGS(th)

VDS=VGS,ID=250μA

2

3

4

V

Drain-Source On-State Resistance

RDS(ON)

VGS=10V,
  ID=40A

-

7.5

9.0

mΩ

Forward
  Transconductance

gFS

VDS=5V,ID=40A

60

-

-

S

Dynamic Characteristics
  (Note4)

Input
  Capacitance

Clss

VDS=30V,VGS=0V,

  F=1.0MHz

-

4700

-

PF

Output
  Capacitance

Coss

-

440

-

PF

Reverse
  Transfer Capacitance

Crss

-

260

-

PF

Switching Characteristics
  (Note 4)

Turn-on Delay
  Time

td(on)

VDD=30V,
  RL=1Ω

VGS=10V,RGEN=2.5Ω

-

21

-

nS

Turn-on Rise
  Time

tr

-

39

-

nS

Turn-Off Delay
  Time

td(off)

-

70

-

nS

Turn-Off Fall
  Time

tf

-

24

-

nS

Total Gate
  Charge

Qg

VDS=30V,ID=30A,

VGS=10V

-

114

-

nC

Gate-Source
  Charge

Qgs

-

33

-

nC

Gate-Drain
  Charge

Qgd

-

18

-

nC

Drain-Source Diode Characteristics

Diode Forward
  Voltage (Note 3)

VSD

VGS=0V,IS=20A

-

-

1.2

V

Diode Forward
  Current (Note 2)

IS

-

-

-

110

A

Reverse Recovery Time

trr

TJ = 25°C, IF = 40A

di/dt = 100A/μs(Note3)

-

43

-

nS

Reverse Recovery Charge

Qrr

-

93

-

nC

Forward
  Turn-On Time

ton

Intrinsic
  turn-on time is negligible (turn-on is dominated by LS+LD)