Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source
  Breakdown Voltage

BVDSS

VGS=0V
  ID=250μA

85

-

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=85V,VGS=0V

-

-

1

μA

Gate-Body
  Leakage Current

IGSS

VGS=±20V,VDS=0V

-

-

±200

nA

On Characteristics

Gate Threshold
  Voltage

VGS(th)

VDS=VGS,ID=250μA

2

3

4

V

Drain-Source On-State Resistance

25℃

RDS(ON)

VGS=10V,
  ID=40A

-

3.7

5

mΩ

125℃

-

6

8

mΩ

Forward
  Transconductance

gFS

VDS=25V,ID=40A

100

165

-

S

Dynamic Characteristics

Input
  Capacitance

Clss

VDS=25V,VGS=0V,

  F=1.0MHz

-

11000

-

PF

Output
  Capacitance

Coss

-

914

-

PF

Reverse
  Transfer Capacitance

Crss

-

695

-

PF

Switching Characteristics
 

Turn-on Delay
  Time

td(on)

VDD=38V,ID=40A VGS=10V,RGEN=1.2Ω

(Note2)

-

23

-

nS

Turn-on Rise
  Time

tr

-

190

-

nS

Turn-Off Delay
  Time

td(off)

-

130

-

nS

Turn-Off Fall
  Time

tf

-

120

-

nS

Total Gate
  Charge

Qg

VDS=60V,ID=40A,

VGS=10V(Note2)

-

250

-

nC

Gate-Source
  Charge

Qgs

-

48

-

nC

Gate-Drain
  Charge

Qgd

-

98

-

nC

Drain-Source Diode Characteristics

Diode Forward
  Voltage

VSD

VGS=0V,IS=40A

-

-

1.2

V

Reverse Recovery Time

trr

TJ = 25°C, IF = 40A

di/dt = 100A/μs(Note2)

-

63

-

nS

Reverse Recovery Charge

Qrr

-

98

-

nC

Forward
  Turn-On Time

ton

Intrinsic
  turn-on time is negligible (turn-on is dominated by LS+LD)