Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source
  Breakdown Voltage

BVDSS

VGS=0V
  ID=250μA

75

V

Zero Gate Voltage Drain Current

IDSS

VDS=75V,VGS=0V

1

μA

Gate-Body
  Leakage Current

IGSS

VGS=±20V,VDS=0V

±200

nA

On Characteristics

Gate Threshold
  Voltage

VGS(th)

VDS=VGS,ID=250μA

2

3

4

V

Drain-Source On-State Resistance

25℃

RDS(ON)

VGS=10V,
  ID=40A

2.9

4

mΩ

125℃

4.7

6.5

mΩ

Forward
  Transconductance

gFS

VDS=25V,ID=40A

100

165

S

Dynamic Characteristics

Input Capacitance

Clss

VDS=25V,VGS=0V,

  F=1.0MHz

11000

PF

Output
  Capacitance

Coss

914

PF

Reverse
  Transfer Capacitance

Crss

695

PF

Switching Characteristics
 

Turn-on Delay
  Time

td(on)

VDD=30V,ID=2A,RL=15Ω VGS=10V,RG=2.5Ω

23

nS

Turn-on Rise
  Time

tr

190

nS

Turn-Off Delay
  Time

td(off)

130

nS

Turn-Off Fall
  Time

tf

120

nS

Total Gate
  Charge

Qg

ID=30A,VDD=30V,VGS=10V

-

250

nC

Gate-Source
  Charge

Qgs

-

48

nC

Gate-Drain
  Charge

Qgd

-

98

nC

Drain-Source Diode Characteristics

Diode Forward
  Voltage

VSD

VGS=0V,IS=40A

1.2

V

Reverse Recovery Time

trr

TJ = 25°C, IF = 40A

di/dt = 100A/μs(Note2)

63

nS

Reverse Recovery Charge

Qrr

98

nC

Forward
  Turn-On Time

ton

Intrinsic
  turn-on time is negligible (turn-on is dominated by LS+LD)