his Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
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18.0A, 500V, RDS(on) = 0.30Ω @VGS = 10 V
Low gate charge ( typical 50nC)
Fast switching
100% avalanche tested
Improved dv/dt capability
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
