【JNG25N120HS 1200V 25A 工控用IGBT单管替代仙童】价格_厂家

品牌

jiaensemi/佳恩半导体

型号

JNG25N120HS

类型

绝缘栅型场效应管/MOS场效应管

沟道类型

N型沟道

导电方式

增强型

封装外形

CER-DIP/陶瓷直插

IGBT

Features

n 1200V,25A

n VCE(sat)(typ.)=2.2V@VGE=15V,IC=25A

n High speed switching

n Higher system efficiency

n Soft current turn-off waveforms

n Square RBSOA using NPT technology

General Description

JIAEN NPT IGBTs offer lower losses and higher energy

efficiency for application such as IH (induction heating),UPS,

general inverter and other soft switching applications.

Absolute Maximum Ratings

Symbol	Parameter	Value	Units
VCES	Collector-Emitter Voltage	1200	V
VGES	Gate-Emitter Voltage	+30	V
IC	Continuous Collector Current( TC=25℃)	45	A
IC	Continuous Collector Current ( TC=100℃)	25	A
ICM	Pulsed Collector Current (Note 1)	80	A
IF	Diode Continuous Forward Current( TC=100℃)	25	A
IFM	Diode Maximum Forward Current (Note 1)	60	A
tsc	Short Circuit Withstand Time	10	us
PD	Maximum Power Dissipation( TC=25℃)	220	W
PD	Maximum Power Dissipation( TC=100℃)	100	W
TJ	Operating Junction Temperature Range	-55 to +150	℃
TSTG	Storage Temperature Range	-55 to +150	℃

Thermal Characteristics

Symbol	Parameter	Max.	Units
Rth j-c	Thermal Resistance, Junction to case for IGBT	0.45	℃/W
Rth j-c	Thermal Resistance, Junction to case for Diode	0.85	℃/W
Rth j-a	Thermal Resistance, Junction to Ambient	40	℃/W

Electrical Characteristics(TC=25℃unless otherwise noted )

Symbol	Parameter	TestConditions	Min.	Typ.	Max.	Units
BVCES	Collector-EmitterBreakdown Voltage	VGE=0V,IC=250uA	1200	-	-	V
ICES	Collector-EmitterLeakage Current	VCE=1200V,VGE=0V	-	-	250	uA
IGES	Gate Leakage Current, Forward	VGE=30V,VCE=0V	-	-	100	nA
IGES	Gate Leakage Current, Reverse	VGE=-30V,VCE=0V	-	-	-100	nA
VGE(th)	GateThreshold Voltage	VGE=VCE,IC=250uA	4.5	-5.0	5.5	V
VCE(sat)	Collector-Emitter Saturation Voltage	VGE=15V,IC=25A	-	2.2	2.5	V
Qg	Total Gate Charge	VCC=960V VGE=15V IC=25A	-	130		nC
Qge	Gate-EmitterCharge		-	30		nC
Qgc	Gate-CollectorCharge		-	70		nC
td(on)	Turn-on Delay Time	VCC=600V VGE=15V IC=25A RG=10W Inductive Load TC=25℃	-	22	-	ns
tr	Turn-on Rise Time		-	35	-	ns
td(off)	Turn-off Delay Time		-	290	-	ns
tf	Turn-off Fall Time		-	170	-	ns
Eon	Turn-on Switching Loss		-	2.2	-	mJ
Eoff	Turn-off Switching Loss		-	1.4	-	mJ
Ets	Total Switching Loss		-	3.6	-	mJ
Cies	InputCapacitance	VCE=25V VGE=0V f = 1MHz	-	1250	-	pF
Coes	OutputCapacitance		-	210	-	pF
Cres	ReverseTransfer Capacitance		-	150	-	pF
RGint	Integrated gate resistor			3.8		Ω

Electrical Characteristics of Diode(TC=25℃unless otherwise noted)

Symbol	Parameter	TestConditions	Min.	Typ.	Max.	Units
VF	DiodeForward Voltage	IF=25A	-	2.3	2.5	V
tr r	Diode Reverse Recovery Time	VCE= 600V IF=25A dIF/dt = 500A/us	-	190		ns
Ir r	Diode peak Reverse Recovery Current		-	20		A
Qr r	Diode Reverse Recovery Charge		-	1600		nC