JNFP15N120M1
IGBT模块/IGBTModule
特性：
l 10μs短路承受时间
l 低饱和压降:VCE (sat)= 2.20V @ IC= 15A , TC=25℃
l 低开关损耗
l 100% RBSOA 测试（2倍额定电流）
l 低杂散电感
l 无铅模块，符合RoHS要求
Features：
l Short Circuit Rated 10μs
l Low Saturation Voltage:VCE (sat)= 2.20V @ IC= 15A , TC=25℃
l Low Switching Loss
l 100% RBSOA Tested（2×Ic）
l Low Stray Inductance
l Lead Free,Compliant with RoHS Requirement
应用：Applications：
l 工业变频器Industrial Inverters
l 伺服应用Servo Applications
IGBT,逆变器/ IGBT,Inverter 最大额定值/ Maximum Rated Values | ||||
VCES | 集电极-发射机电压 Collector-Emitter Blocking Voltage | 1200 | V | |
VGES | 门极－发射极电压 Gate-Emitter Voltage | ±20 | V | |
IC | 集电极直流电流 Continuous Collector Current | TC= 80℃, | 15 | A |
TC= 25℃ | 30 | A | ||
ICM(1) | 集电极脉冲电流 Peak Collector Current Repetitive | TJ= 150℃ | 30 | A |
tSC | 短路承受时间 Short Circuit Withstand Time | >10 | μs | |
PD | 单桥臂IGBT最大耗散功率 Maximum Power Dissipation (IGBT) | TC= 25℃ TJmax=150℃ | 150 | W |
IGBT的电气特性Electrical Characteristics of IGBT(TJ= 25℃)
静态特性/Static characteristicsMinTypMax
VGE(th) | 门极－发射极阈值电压 Gate-Emitter Threshold Voltage | IC= 1 mA, VCE= VGE | 4.0 | 5.0 | 6.0 | V | |
VCE(sat) | 集电极－发射极饱和电压 Collector-EmitterSaturation Voltage | IC= 15A, VGE = 15V | TJ= 25℃ |
| 2.20 | 2.40 | V |
TJ= 125℃ |
| 2.70 |
| V | |||
ICES | 集电极－发射极漏电流 Collector-Emitter LeakageCurrent | VGE= 0V, VCE = VCES, TJ= 25℃ |
|
| 1 | mA | |
IGES | 门极－发射极漏电流 Gate-Emitter LeakageCurrent | VGE= 0V, VCE = VCES, TJ= 25℃ |
|
| 200 | nA | |
Cies | 输入电容 Input Capacitance | VCE= 25V, VGE= 0V , f ＝1MHz |
| 1.5 |
| nF | |
Coes | 输出电容 Output Capacitance |
| 0.13 |
| nF | ||
开关特性/Switching Characteristics
td(on) | 开通延迟时间 Turn-on Delay Time | VCC= 600V,IC= 15A, RG=68??,VGE=±15V, Inductive Load | TJ= 25℃ |
| 105 |
| ns |
TJ= 125℃ |
| 90 |
| ||||
tr | 上升时间 Rise Time | TJ= 25℃ |
| 55 |
| ns | |
TJ= 125℃ |
| 43 |
| ||||
td(off) | 关断延迟时间 Turn-off Delay Time | TJ= 25℃ |
| 285 |
| ns | |
TJ= 125℃ |
| 310 |
| ||||
tf | 下降时间 Fall Time | TJ= 25℃ |
| 250 |
| ns | |
TJ= 125℃ |
| 365 |
| ||||
Eon | 开通损耗 Turn-on Switching Loss | TJ= 25℃ |
| 1.35 |
| mJ | |
TJ= 125℃ |
| 1.70 |
| ||||
Eoff | 关断损耗 Turn-off Switching Loss | TJ= 25℃ |
| 0.55 |
| mJ | |
TJ= 125℃ |
| 0.75 |
| ||||
Qg | 门极充电电量 Total Gate Charge | TJ= 25℃ |
| 140 |
| nC | |
RBSOA | 安全工作区 RBSOA | IC=30A,VCC=960V,Vp=1200V, Rg = 15??, VGE=+15V to 0V, TJ=150°C | Trapezoid |
| |||
SCSOA | 短路安全工作区 SCSOA | VCC= 600V, VGE= 15V, TJ= 150℃ | 10 |
|
| μs | |
RθJC | 单桥臂IGBT芯片与外壳间热阻 Junction-To-Case (IGBT Part, Per Leg) |
|
| 0.83 | ℃/W | ||
