600V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance,provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devicesare well suited for high efficiency switched mode powersupplies,active power factor correctionbased on halfbridge topology. Features 20A, 600V, RDS(on)typ. = 0.35Ω@VGS = 10 V Low gate charge(50nC) High ruggedness Fast switching 100% avalanche tested Improved dv/dt capability Absolute Maximum RatingsTC= 25℃unless otherwise noted Symbol Parameter JFAM20N60C Units VDSS Drain – Source Voltage 600 V ID Drain Current Continuous ( TC= 25℃) 20* A Continuous ( TC= 100℃) 12.5* A IDM Drain Current - Pulsed ( Note 1 ) 60 A VGSS Gate – Source Voltage ±30 V EAS Single Pulsed Avalanche Energy ( Note 2 ) 450 mJ IAR Avalanche Current ( Note 1 ) 20 A EAR Repetitive Avalanche Energy ( Note 1 ) 20.7 mJ dv/dt Peak Diode Recovery dv/dt ( Note 3 ) 50 V/ns PD Power Dissipation ( TC= 25℃) 272 W -Derate above 25℃ 2.17 W/℃ TJ,TSTG Operating and Storage Temperature Range -55 to +150 ℃ TL Maximum lead temperature for soldering purposes 300 ℃ 1/8” frome case for 5 seconds *Drain current limited by maximum junction temperature. Thermal characteristics Symbol Parameter JFAM20N60C Units RθJC Thermal Resistance, Junction-to-Case 0.46 ℃/W RθJA Thermal Resistance, Junction-to-Ambient 40 ℃/W Electrical CharacteristicsTC= 25℃unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain – Source Breakdown Voltage VGS= 0 V, ID= 250 uA 600 -- -- V ⊿BVDSS/⊿TJ Breakdown Voltage Temperature Coefficient ID= 250 uA, Referenced to 25℃ -- 0.5 -- V/℃ IDSS Zero Gate Voltage Drain Current VDS= 600 V, VGS= 0 V -- -- 1 uA VDS= 480 V, Tc = 125℃ -- -- 10 uA IGSSF Gate-Body Leakage Current, Forward VGS= 30 V, VGS= 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS= -30 V, VGS= 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS= VGS, ID= 250 uA 2.0 -- 4.0 V RDS(on) Static Drain-Source on-Resistance VGS= 10V, ID= 10A -- 0.35 0.5 Ω gFS Forward Transconductance VDS= 40 V, ID= 10 A ( Note 4 ) -- 18 -- S Dynamic Characteristics Ciss Input Capacitance VDS= 25 V, VGS= 0 V, f = 1.0 MHz -- 2310 -- pF Coss Output Capacitance -- 1270 -- pF Crss Reverse Transfer Capacitance -- 85 -- pF Switching Characteristics td(on) Turn-On Delay Time VDS= 300 V, ID= 20.0 A , RG= 25Ω , VGS= 10 V (Note 4,5 ) -- 60 -- ns tr Turn-On Rise Time -- 130 -- ns td(off) Turn-Off Delay Time -- 220 -- ns tf Turn-Off Fall Time -- 70 -- ns Qg Total Gate Charge VDS= 480 V, ID= 20.0 A VGS= 10 V (Note 4,5 ) -- 50 -- nC Qgs Gate-Source Charge -- 15 -- nC Qgd Gate-Drain Charge -- 23 -- nC Drain – Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 20 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 80 A VSD Drain-Source Diode Forward Voltage VGS= 0 V, IS= 20.0 A -- -- 1.4 V trr Reverse Recovery Time VGS= 0 V, IS= 20.0 A -- 460 -- ns Qrr Reverse Recovery Charge dIF/dt = 100 A/us ( Note 4 ) -- 5.1 -- uC Notes: 产品详情数据具体请参考友情链接的独立网站里面的产品数据或者电话咨询！徐经理：18561536907
青岛佳恩半导体有限公司是一家拥有核心芯片及方案技术的高科技公司，股票代码800328。公司主要从事IGBT、MOSFET、FRD等功率半导体芯片与器件的设计、制造和销售，并提供相关的系统应用解决方案。本部设立在山东省青岛市，同时在上海设有设计和销售中心，深圳设有办事处。
青岛佳恩半导体有限公司核心技术团队拥有多年海内外功率半导体芯片研发和制造经验并实现了中国IGBT芯片批量生产和销售的产业化。公司拥有国内一流、国际领先的IGBT，MOSFET和FRD等功率半导体芯片的设计和工艺集成技术，并建有国内领先的的IGBT产品性能测试、应用及可靠性试验室。公司团队拥有成熟的功率半导体芯片制造和产业化经验，以及丰富的销售和市场资源。
公司秉承“创新、优质、诚信”的经营理念，在国内核心的功率半导体IGBT芯片行业完全被国外垄断的局面下，努力创建并成为中国功率半导体行业尤其是IGBT芯片行业的领军企业。
