600V N-Channel MOSFET
Features - 12A, 600V, RDS(on)typ. = 0.53Ω@VGS = 10 V - Low gate charge - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability |
General Description
This Power MOSFET is produced using advanced
planar stripe DMOS technology.This advanced
technology has been especially tailored to minimize
on-state resistance,provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode.
These devicesare well suited for high efficiency
switched mode powersupplies,active power factor
correctionbased on halfbridge topology.
Absolute Maximum RatingsTC= 25℃unless otherwise noted
Symbol | Parameter | JFPC12N60C | JFFC12N60C | Units | |
VDSS | Drain – Source Voltage | 600 | V | ||
ID | Drain Current | Continuous ( TC= 25℃) | 12 | 12* | A |
Continuous ( TC= 100℃) | 7.2 | 7.2* | A | ||
IDM | Drain Current - Pulsed ( Note 1 ) | 48 | A | ||
VGSS | Gate – Source Voltage | ±30 | V | ||
EAS | Single Pulsed Avalanche Energy ( Note 2 ) | 512 | mJ | ||
IAR | Avalanche Current ( Note 1 ) | 12 | A | ||
EAR | Repetitive Avalanche Energy ( Note 1 ) | 22 | mJ | ||
dv/dt | Peak Diode Recovery dv/dt ( Note 3 ) | 4.5 | V/ns | ||
PD | Power Dissipation ( TC= 25℃) | 220 | 40 | W | |
-Derate above 25℃ | 1.76 | 0.33 | W/℃ | ||
TJ,TSTG | Operating and Storage Temperature Range | -55 to +150 | ℃ | ||
TL | Maximum lead temperature for soldering purposes | 300 | ℃ | ||
1/8” frome case for 5 seconds | |||||
*Drain current limited by maximum junction temperature.
Thermal characteristics
Symbol | Parameter | JFPC12N60C | JFFC12N60C | Units |
RθJC | Thermal Resistance, Junction-to-Case | 0.57 | 3.07 | ℃/W |
RθJS | Thermal Resistance, Case-to-Sink Typ. | 0.5 | -- | ℃/W |
RθJA | Thermal Resistance, Junction-to-Ambient | 62.5 | 62.5 | ℃/W |
Electrical CharacteristicsTC= 25℃unless otherwise noted
Symbol | Parameter | Test Conditions | Min | Typ | Max | Units |
Off Characteristics | ||||||
BVDSS | Drain – Source Breakdown Voltage | VGS= 0 V, ID= 250 uA | 600 | -- | -- | V |
⊿BVDSS/⊿TJ | Breakdown Voltage Temperature Coefficient | ID= 250 uA, Referenced to 25℃ | -- | 0.6 | -- | V/℃ |
IDSS | Zero Gate Voltage Drain Current | VDS= 600 V, VGS= 0 V | -- | -- | 1 | uA |
VDS= 480 V, Tc = 125℃ | -- | -- | 10 | uA | ||
IGSSF | Gate-Body Leakage Current, Forward | VGS= 30 V, VGS= 0 V | -- | -- | 100 | nA |
IGSSR | Gate-Body Leakage Current, Reverse | VGS= -30 V, VGS= 0 V | -- | -- | -100 | nA |
On Characteristics | ||||||
VGS(th) | Gate Threshold Voltage | VDS= VGS, ID= 250 uA | 2.0 | -- | 4.0 | V |
RDS(on) | Static Drain-Source on-Resistance | VGS= 10V, ID= 6.0 A | -- | 0.53 | 0.75 | Ω |
gFS | Forward Transconductance | VDS= 40 V, ID= 6.0 A ( Note 4 ) | -- | 11.3 | -- | S |
Dynamic Characteristics | ||||||
Ciss | Input Capacitance | VDS= 25 V, VGS= 0 V, f = 1.0 MHz | -- | 1980 | -- | pF |
Coss | Output Capacitance | -- | 170 | -- | pF | |
Crss | Reverse Transfer Capacitance | -- | 10 | -- | pF | |
Switching Characteristics | ||||||
td(on) | Turn-On Delay Time | VDS= 300 V, ID= 12.0 A , RG= 25Ω , VGS= 10 V (Note 4,5 ) | -- | 27 | -- | ns |
tr | Turn-On Rise Time | -- | 25 | -- | ns | |
td(off) | Turn-Off Delay Time | -- | 62 | -- | ns | |
tf | Turn-Off Fall Time | -- | 39.5 | -- | ns | |
Qg | Total Gate Charge | VDS= 480 V, ID= 12.0 A VGS= 10 V (Note 4,5 ) | -- | 40 | -- | nC |
Qgs | Gate-Source Charge | -- | 9.8 | -- | nC | |
Qgd | Gate-Drain Charge | -- | 14.5 | -- | nC | |
Drain – Source Diode Characteristics and Maximum Ratings | ||||||
IS | Maximum Continuous Drain-Source Diode Forward Current | -- | -- | 12 | A | |
ISM | Maximum Pulsed Drain-Source Diode Forward Current | -- | -- | 48 | A | |
VSD | Drain-Source Diode Forward Voltage | VGS= 0 V, IS= 12.0 A | -- | -- | 1.4 | V |
trr | Reverse Recovery Time | VGS= 0 V, IS= 12.0 A | -- | 580 | -- | ns |
Qrr | Reverse Recovery Charge | dIF/dt = 100 A/us ( Note 4 ) | -- | 3.5 | -- | uC |
Notes:
- 1. Repetitive Rating : Pulsed width limited by maximum junction temperature
- 2. L = 6.3mH , IAS= 12A, VDD= 50V,RG= 25Ω, Starting TJ= 25℃
- 3. ISD≤12.0A, di/dt≤100A/us, VDD≤BVDSS, Starting TJ= 25°C
- 4. Pulsed Test : Pulsed width≤300us, Duty cycle ≤ 2%
- 5. Essentially independent of operating temperature
产品详情数据具体请参考友情链接的独立网站里面的产品数据或者电话咨询！徐经理：18561536907
公司介绍：青岛佳恩半导体有限公司是一家拥有核心芯片及方案技术的高科技公司，股票代码800328。公司主要从事IGBT、MOSFET、FRD等功率半导体芯片与器件的设计、制造和销售，并提供相关的系统应用解决方案。本部设立在山东省青岛市，同时在上海设有设计和销售中心，深圳设有办事处。
青岛佳恩半导体有限公司核心技术团队拥有多年海内外功率半导体芯片研发和制造经验并实现了中国IGBT芯片批量生产和销售的产业化。公司拥有国内一流、国际领先的IGBT，MOSFET和FRD等功率半导体芯片的设计和工艺集成技术，并建有国内领先的的IGBT产品性能测试、应用及可靠性试验室。公司团队拥有成熟的功率半导体芯片制造和产业化经验，以及丰富的销售和市场资源。
公司秉承“创新、优质、诚信”的经营理念，在国内核心的功率半导体IGBT芯片行业完全被国外垄断的局面下，努力创建并成为中国功率半导体行业尤其是IGBT芯片行业的领军企业。
