JNFP40N120M
IGBT Module
Features：
l IGBT Inverter Short Circuit Rated 10μs
l IGBT Inverter Low Saturation Voltage
l Low Switching Loss
l Low Stray Inductance
l Lead Free, Compliant With RoHS Requirement
Applications：
l Industrial Inverters
l Servo Applications
IGBT-Inverter
Absolute Maximum Ratings(TC= 25℃ unless otherwise specified)
Symbol | Description | Value | Units | |
VCES | Collector-Emitter Blocking Voltage | 1200 | V | |
VGES | Gate-Emitter Voltage | ±20 | V | |
IC | Continuous Collector Current | TC= 80℃ | 40 | A |
TC= 25℃ | 80 | A | ||
ICM(1) | Peak Collector Current Repetitive | TJ= 150℃ | 80 | A |
tSC | Short Circuit Withstand Time | TJ= 150℃ | >10 | μs |
PD | Maximum Power Dissipation (IGBT) | TC= 25℃ TJmax=150℃ | 255 | W |
Characteristic Values(TJ= 25℃ unless otherwise specified)
Symbol | Description | Test Conditions | Min. | Typ. | Max. | Units | |
ICES | Collector-Emitter Leakage Current | VGE= 0V, VCE = VCES | TJ= 25℃ |
|
| 1 | mA |
IGES | Gate-Emitter Leakage Current | VGE= VGES, VCE= 0V | TJ= 25℃ |
|
| 200 | nA |
VGE(th) | Gate-Emitter Threshold Voltage | IC= 1 mA, VCE= VGE | 4.5 | 5.2 | 6.5 | V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 40A , VGE = 15V | TJ= 25℃ |
| 1.90 | 2.10 | V |
TJ= 125℃ |
| 2.20 | 2.40 | V | |||
Cies | Input Capacitance | VCE= 25V, VGE= 0V , f＝1MHz |
| 2.2 |
| nF | |
Coes | Output Capacitance |
| 0.21 |
| nF | ||
td(on) | Turn-on Delay Time | VCC= 600V, IC= 40A, RG= 33??, VGE=±15V , Inductive Load, TJ= 25℃ |
| 115 |
| ns |
tr | Rise Time |
| 70 |
| ns | |
td(off) | Turn-off Delay Time |
| 475 |
| ns | |
tf | Fall Time |
| 285 |
| ns | |
Eon | Turn-on Switching Loss |
| 6.2 |
| mJ | |
Eoff | Turn-off Switching Loss |
| 2.4 |
| mJ | |
Ets | Total Switching Loss |
| 8.6 |
| mJ | |
td(on) | Turn-on Delay Time | VCC= 600V, IC= 40A, RG= 20??, VGE=±15V, Inductive Load, TJ= 125℃ |
| 105 |
| ns |
tr | Rise Time |
| 75 |
| ns | |
td(off) | Turn-off Delay Time |
| 505 |
| ns | |
tf | Fall Time |
| 445 |
| ns | |
Eon | Turn-on Switching Loss |
| 8.1 |
| mJ | |
Eoff | Turn-off Switching Loss |
| 3.9 |
| mJ | |
Ets | Total Switching Loss |
| 12.0 |
| mJ | |
Qg | Internal Gate Resistor | VCE= 600V, IC= 40A, VGE= -15V ~ +15V |
| 445 |
| nC |
RBSOA | Reverse Bias Safe Operating Area | IC= 80A ,VCC= 960V, Vp =1200V, Rg = 15??, VGE=+15V to 0V, TJ=150°C | Trapezoid |
| ||
SCSOA | Short Circuit Safe Operating Area | VCC= 600V, VGE= 15V, TJ= 150℃ | 10 |
|
| μs |
Diode-Inverter
Absolute Maximum Ratings(TC= 25℃unless otherwise specified)
Symbol | Description | Value | Units |
VRRM | Repetitive Peak Reverse Voltage | 1200 | V |
IF | DC Forward Current | 40 | A |
IFRM | Repetitive Peak Forward Current | 80 | A |
Characteristic Values
Symbol | Description | Conditions | Min. | Typ. | Max. | Units | |
VF | Forward Voltage | IF＝40A, VGE= 0V | TJ= 25℃ |
| 2.1 |
| V |
TJ= 150℃ |
| 2.1 |
| ||||
Irr | Peak Reverse Recovery Current | IF＝40A, di/dt = 835A/μs, Vrr= 600V, VGE= -15V | TJ= 25℃ |
| 35 |
| A |
TJ= 125℃ |
| 45 |
| ||||
Qrr | Recovered Charge | TJ= 25℃ |
| 3.9 |
| μC | |
TJ= 125℃ |
| 6.0 |
| ||||
Erec | Reverse Recovery Energy | TJ= 25℃ |
| 0.7 |
| mJ | |
TJ= 125℃ |
| 1.3 |
| ||||
Diode-Rectifier
Absolute Maximum Ratings(TC= 25℃ unless otherwise specified)
Symbol | Description | Value | Units | |
VRRM | Repetitive Peak Reverse Voltage | TJ=25℃ | 1800 | V |
IFRMSM | Forward Current RMS Maximum Per Diode | TJ=80℃ | 50 | A |
IRMSM | Maximum RMS Current At Rectifier Output | TC= 80℃ | 60 | A |
IFSM | Surge Current @tp=10 ms | TJ=25℃ | 315 | A |
TJ=150℃ | 270 | |||
I2t | tp=10 ms | TJ=25℃ | 500 | A2s |
TJ=150℃ | 370 | |||
Characteristic Value
Symbol | Description | Conditions | Min. | Typ. | Max. | Units | |
VF | Forward Voltage | IF＝40A (tested on top of terminals) | TJ= 25℃ |
| 1.10 | 1.30 | V |
TJ= 125℃ |
| 1.05 |
| ||||
IGBT-Brake-Chopper
Absolute Maximum Ratings(TC= 25℃ unless otherwise specified) | ||||
Symbol | Description | Value | Units | |
VCES | Collector-Emitter Blocking Voltage | 1200 | V | |
VGES | Gate-Emitter Voltage | ±20 | V | |
IC | Continuous Collector Current | TC= 80℃ | 15 | A |
TC= 25℃ | 30 | A | ||
ICM(1) | Peak Collector Current Repetitive | TJ= 150℃ | 30 | A |
PD | Maximum Power Dissipation Per Leg | TC= 25℃ TJmax=150℃ | 180 | W |
Characteristic Values
Symbol | Description | Test Conditions | Min. | Typ. | Max. | Units | |
ICES | Collector-Emitter Leakage Current | VGE= 0V, VCE = VCES | TJ= 25℃ |
|
| 1 | mA |
IGES | Gate-Emitter Leakage Current | VGE= VGES, VCE= 0V | TJ= 25℃ |
|
| 200 | nA |
VGE(th) | Gate-Emitter Threshold Voltage | IC= 1 mA, VCE= VGE | 4.5 | 5.2 | 6.5 | V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 15A , VGE = 15V | TJ= 25℃ |
| 1.90 | 2.10 | V |
TJ= 125℃ |
| 2.20 |
| V | |||
Cies | Input Capacitance | VCE= 25V, VGE= 0V , f＝1MHz |
| 1.5 |
| nF | |
Coes | Output Capacitance |
| 0.13 |
| nF | ||
