MMBT8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. As complementary type the PNP transistorMMBT8550 is recommended. Absolute Maximum Ratings (Ta= 25OC) SOT-23 Plastic Package Collector Base VoltageParameterSymbolVCBOValue40UnitVCollector Emitter VoltageEmitter Base VoltageCollector CurrentPower DissipationJunction TemperatureStorage Temperature Range Characteristics at Ta= 25OCVCEOVEBOICPtotTjTS256600350150- 55 to 150VVmAmWOCOC DC Current GainParameterSymbol Min.Typ.Max.Unitat VCE= 1 V, IC= 100 mA at VCE= 1 V, IC= 500 mACollector Base Cutoff Currentat VCB= 35 VCollector Base Breakdown VoltageMMBT8050CMMBT8050DhFEhFEhFEICBO10016040----- -250400-100 ----nA Vat IC= 10 µACollector Emitter Breakdown Voltageat IC= 2 mAEmitter Base Breakdown Voltageat IE= 100 µACollector Emitter Saturation Voltageat IC= 500 mA, IB= 50 mABase Emitter Saturation Voltageat IC= 500 mA, IB= 50 mAGain Bandwidth Productat VCE= 5 V, IC= 10 mAV(BR)CBO40V(BR)CEO25 V(BR)EBO 6 VCE(sat) - VBE(sat) - fT- - - - - 100 - - 0.5
1.2 - V V V V MHz