Free-Standing GaN Substrates)
产品型号Item | GaN-FS-N | GaN-FS-SI |
尺寸Dimensions | Ф 50.8mm ± 1mm | |
厚度Thickness | 300 ± 25 µm | |
晶体取向Orientation | C-axis(0001) ± 0.5° | |
主定位边Orientation Flat | (1-100) ± 0.5°, 16.0 ± 1.0mm | |
次定位边Secondary Orientation Flat | (11-20) ± 3°, 8.0 ± 1.0mm | |
TTV(Total Thickness Variation) | ≤15 µm | |
弯曲度BOW | ≤20 µm | |
导电类型Conduction Type | N-type | Semi-Insulating |
电阻率Resistivity(300K) | < 0.5 Ω·cm | >106 |
位错密度Dislocation Density | Less than 5x106 | |
有效面积Useable Surface Area | > 90% | |
抛光Polishing | Front Surface: Ra < 0.2nm. Epi-ready | |
Back Surface: Fine ground |
2英寸氮化镓厚膜晶片2” GaN
Templates
产品型号Item | GaN-T-N | GaN-T-S |
尺寸Dimensions | Ф 2” | |
厚度Thickness | 15 µm, 20 µm, 30 µm, 40 µm | 30 µm, 90 µm |
晶体取向Orientation | C-axis(0001) ± 1° | |
导电类型Conduction Type | N-type | Semi-Insulating |
电阻率Resistivity(300K) | < 0.05 Ω·cm | ﹥106 |
位错密度Dislocation Density | Less than 1x108 | |
衬底结构Substrate structure | Thick GaN on Sapphire(0001) | |
有效面积Useable Surface Area | > 90% | |
抛光Polishing | Standard: SSP | |
Option: DSP |
